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| Preliminary data BSP 223 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Avalanche rated * VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 600 V ID 0.38 A RDS(on) 5 Package Marking BSP 223 SOT-223 BSP 223 Electrical Characteristics, at Tj = 25C, unless otherwise specified Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 C ID A 0.38 DC drain current, pulsed TA = 25 C IDpuls 1.52 E AS Avalanche energy, single pulse ID = 1.4 A, VDD = 50 V, RGS = 25 L = 122 mH, Tj = 25 C mJ 130 V GS P tot Gate source voltage Power dissipation TA = 25 C 20 1.8 V W Semiconductor Group 1 25/09/1997 Preliminary data BSP 223 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 C 70 10 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 600 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 600 V, V GS = 0 V, Tj = 25 C V DS = 600 V, V GS = 0 V, Tj = 125 C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance V GS = 10 V, ID = 0.38 A 4 5 Semiconductor Group 2 25/09/1997 Preliminary data BSP 223 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 0.38 A gfs S 0.2 0.8 pF 300 400 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 40 60 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 15 25 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 tr 8 12 Rise time V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 td(off) 12 18 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 tf 45 65 Fall time V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Qg(th) 25 40 nC Gate charge at threshold V DD = 40 V, ID 0.1 A, V GS 0 to 1 V Qg(7) Qg(total) 0.4 0.6 Gate Charge at 7.0 V V DD = 40 V, ID = 0.4 A, V GS 0 to 7 V 13 20 Gate Charge total V DD = 40 V, ID = 0.4 A, V GS 0 to 10 V V (plateau) 16 25 V Gate plateau voltage V DS = 15 V, ID = 0.4 A - 4.4 - Semiconductor Group 3 25/09/1997 Preliminary data BSP 223 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current TA = 25 C IS A 0.38 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 1.52 V Inverse diode forward voltage V GS = 0 V, IF = 0.76 A trr 0.85 1.2 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/s Qrr 200 300 C Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/s - 0.65 1 Semiconductor Group 4 25/09/1997 Preliminary data BSP 223 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.40 A ID 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0 2.0 W Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 20 40 60 80 100 120 C 160 TA TA Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 1 Transient thermal impedance Zth JA = (tp ) parameter: D = tp / T 10 2 K/W A /I D ID V DS t = 340.0s p 1 ms 10 1 ZthJC 10 0 R DS (o n) 10 0 = 10 ms 10 -1 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 10 -2 single pulse 10 -4 DC 10 -3 0 10 1 2 3 0.05 0.02 0.01 10 10 V 10 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 VDS tp Semiconductor Group 5 25/09/1997 Preliminary data BSP 223 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 0.9 A ID 0.7 0.6 0.5 0.4 0.3 0.2 a l Ptot = 2W j k if g h ed c VGS [V] a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 16 a RDS (on) 12 10 b b g 7.0 h 7.5 i j 8.0 8.5 8 6 d h kj c e fg i k 9.0 l 10.0 4 2 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i 8.0 8.5 0.1 0.0 0 2 4 6 8 10 12 14 V 17 j 9.0 k 10.0 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 A 0.50 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s V DS 2 x ID x RDS(on)max 1.8 A ID 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 25/09/1997 Preliminary data BSP 223 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.38 A, VGS = 10 V 13 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 2.8 typ 98% 11 RDS (on) 10 9 8 7 98% 6 5 4 3 2 1 0 -60 -20 20 60 100 C 160 typ 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 2% Tj 60 100 C 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 pF C A IF 10 3 10 0 Ciss 10 2 10 -1 Tj = 25 C typ Tj = 150 C typ Coss Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 Crss 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 25/09/1997 Preliminary data BSP 223 Avalanche energy EAS = (Tj) parameter: ID = 1.4 A, VDD = 50 V RGS = 25 , L = 122 mH 140 mJ 120 EAS 110 100 90 80 70 60 50 40 Typ. gate charge VGS = (QGate) parameter: ID puls = 0 A 16 V VGS 12 10 8 0,2 VDS max 0,8 VDS max 6 4 30 20 10 0 20 2 0 40 60 80 100 120 C 160 0 2 4 6 8 10 12 14 16 nC 20 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 710 V 680 V(BR)DSS 660 640 620 600 580 560 540 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 25/09/1997 |
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